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| 2N5551 / MMBT5551 2N5551 MMBT5551 C E C B TO-92 E SOT-23 Mark: 3S B NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25C unless otherwise noted Parameter Value 160 180 6.0 600 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5551 625 5.0 83.3 200 Max *MMBT5551 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor International 2N5551/MMBT5551, Rev A 2N5551 / MMBT5551 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 120 V, IE = 0, VCB = 120 V, IE = 0, TA = 100C VEB = 4.0 V, IC = 0 160 180 6.0 50 50 50 V V V nA A nA ON CHARACTERISTICS hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 50 mA, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 80 80 30 250 0.15 0.20 1.0 1.0 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo hfe NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure IC = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 250 A, VCE = 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz 100 300 6.0 20 50 250 8.0 dB MHz pF pF 3 *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) 2N5551 / MMBT5551 NPN General Purpose Amplifier (continued) Typical Characteristics 250 200 150 25 C 125 C VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 25 C = 10 100 - 40 C 0.2 125 C 50 0 0.1 V C E = 5V 0.1 0 - 40 C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 0.8 = 10 V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current - 40 C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 0.4 0.2 0 125 C 0.6 0.4 0.2 0 0.1 25 C 125 C VCE = 5V 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Cutoff Current vs. Ambient Temperature I CBO- COLLE CTOR CURRENT (nA) VCB = 100V BV CER - BREAKDOWN VOLTAGE (V) 50 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 260 I C = 1.0 mA 240 10 220 200 180 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 160 0.1 1 10 100 1000 RESISTANCE (k ) 2N5551 / MMBT5551 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) 30 h FE - SMALL SIGNAL CURRENT GAIN Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz 25 Small Signal Current Gain vs Collector Current 16 FREG = 20 MHz V CE = 10V CAPACITANCE (pF) 12 20 15 8 10 C ib C cb 1 10 100 4 5 0 0.1 0 1 V CE - COLLECTOR VOLTAGE (V) 10 I C - COLLECTOR CURRENT (mA) 50 Power Dissipation vs Ambient Temperature 700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G This datasheet has been download from: www..com Datasheets for electronics components. |
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